Boron Nitride and Graphene : the possible way toward band gap opening of graphene?

Now researchers have a new focus to pursue the band gap opening of graphene.
BN thin film, a two dimensional insulator, has a band gap > 5 eV and very similar structure to graphene. Some theoretical calculations have suggested the hybrid-BNC film and graphene on BN could be the potential way toward band gap engineering.
Besides, the BN layer can also be grown on copper by CVD synthesis, just like the graphene. I believe that the BN film and graphene should have some interesting interactions between them. For example, Philip Kim's group used BN as the substrate for making high mobility graphene devices, since the BN is an atomically smooth and dangling-bond-free insulator, which makes it an ideal dielectric substrate. However, the problem is still there, the creation of the band gap is usually accompanied with a decrease of carrier mobility.
It seems still a long way to go for making the effective graphene transistors.

Here are some of the recent works in BN research
http://www.nature.com/nmat/journal/v9/n5/full/nmat2711.html
http://www.nature.com/nnano/journal/v5/n10/full/nnano.2010.172.html
http://pubs.acs.org/doi/abs/10.1021/nl1022139
http://pubs.acs.org/doi/abs/10.1021/nl1023707
http://onlinelibrary.wiley.com/doi/10.1002/smll.201001628/abstract
http://pubs.acs.org/doi/abs/10.1021/jp110985w